Infineon MOSFET Gate Driver, 600 mA 8-Pin 600 V, SOIC

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Sous-total (1 bobine de 2500 unités)*

890,00 €

(TVA exclue)

1 077,50 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
2500 +0,356 €890,00 €

*Prix donné à titre indicatif

N° de stock RS:
258-4013
Référence fabricant:
IRS2308STRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Output Current

600mA

Pin Count

8

Fall Time

35ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

220ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

IRS

Automotive Standard

No

The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V.

Floating channel designed for bootstrap operation

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

Cross-conduction prevention logic

Matched propagation delay for both channels

Outputs in phase with inputs

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