Infineon MOSFET Gate Driver, 360 mA 8-Pin 600 V, SOIC

Voir l’ensemble des Gate Drivers

Sous-total (1 bobine de 2500 unités)*

1 677,50 €

(TVA exclue)

2 030,00 €

(TVA incluse)

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  • Expédition à partir du 14 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,671 €1 677,50 €

*Prix donné à titre indicatif

N° de stock RS:
244-9741
Référence fabricant:
IR2102STRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET & IGBT Driver

Output Current

360mA

Pin Count

8

Fall Time

90ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

100ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

IR2101(S)/IR2102(S)

Standards/Approvals

No

Automotive Standard

No

The Infineon Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices.These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. This makes driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN, and CoolSiC. That’s why Infineon offers more than 500 EiceDRIVER gate driver IC solutions suitable for any power switch, and any application.

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 10 to 20V

Undervoltage lockout

3.3V, 5V, and 15V logic input compatible

Matched propagation delay for both channels

Outputs in phase with inputs (IR2101) or out of

phase with inputs (IR2102)

Also available LEAD-FREE

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