Infineon 2ED2110S06MXUMA1 Gate Driver, 2.5 A 16-Pin 10 V, DSO
- N° de stock RS:
- 236-3637
- Référence fabricant:
- 2ED2110S06MXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
1 027,00 €
(TVA exclue)
1 243,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,027 € | 1 027,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-3637
- Référence fabricant:
- 2ED2110S06MXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | General Purpose Driver | |
| Output Current | 2.5A | |
| Pin Count | 16 | |
| Fall Time | 17ns | |
| Package Type | DSO | |
| Driver Type | General Purpose | |
| Rise Time | 35ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 10V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Board | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type General Purpose Driver | ||
Output Current 2.5A | ||
Pin Count 16 | ||
Fall Time 17ns | ||
Package Type DSO | ||
Driver Type General Purpose | ||
Rise Time 35ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 10V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Board | ||
Automotive Standard AEC-Q100 | ||
The Infineon high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It provides excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages. With no parasitic Thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
50% lower level-shift losses
Liens connexes
- Infineon 2ED2110S06MXUMA1 Gate Driver 10 → 20V 16-Pin, DSO
- Infineon 2ED2182S06FXUMA1 MOSFET Gate Driver 20V 8-Pin, DSO
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- Infineon 2ED2181S06FXUMA1 MOSFET Gate Driver 20V 8-Pin, DSO
- Infineon 2ED2183S06FXUMA1 MOSFET Gate Driver 20V 8-Pin, DSO
- Infineon 2ED21814S06JXUMA1 10 → 20V, DSO
- Infineon 2ED2184S06FXUMA1 10 → 20V, DSO
- Infineon 2ED2101S06FXUMA1 Gate Driver 10 → 20V 8-Pin, DSO
