Infineon 2ED2184S06FXUMA1, Gate Driver 2, 2.5 A 14-Pin 25 V, DSO
- N° de stock RS:
- 258-0613
- Référence fabricant:
- 2ED2184S06FXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,23 €
(TVA exclue)
3,908 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 070 unité(s) expédiée(s) à partir du 22 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,615 € | 3,23 € |
| 20 - 48 | 1,38 € | 2,76 € |
| 50 - 98 | 1,275 € | 2,55 € |
| 100 - 198 | 1,195 € | 2,39 € |
| 200 + | 1,105 € | 2,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0613
- Référence fabricant:
- 2ED2184S06FXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 14 | |
| Package Type | DSO | |
| Fall Time | 15ns | |
| Driver Type | Gate Driver | |
| Rise Time | 600ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | 2ED2184 (4) S06F (J) | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver | ||
Output Current 2.5A | ||
Pin Count 14 | ||
Package Type DSO | ||
Fall Time 15ns | ||
Driver Type Gate Driver | ||
Rise Time 600ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series 2ED2184 (4) S06F (J) | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (400 ns)
Maximum supply voltage of 25 V
50% lower level-shift losses
Liens connexes
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- Infineon 2ED2183S06FXUMA1 MOSFET Gate Driver 20V 8-Pin, DSO
