Infineon, Gate Driver 2, 2.5 A 20 V, DSO
- N° de stock RS:
- 258-0610
- Référence fabricant:
- 2ED21814S06JXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
2 075,00 €
(TVA exclue)
2 500,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,83 € | 2 075,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0610
- Référence fabricant:
- 2ED21814S06JXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 2.5A | |
| Package Type | DSO | |
| Fall Time | 15ns | |
| Driver Type | Gate Driver | |
| Rise Time | 200ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | 2ED21814S06J | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver Module | ||
Output Current 2.5A | ||
Package Type DSO | ||
Fall Time 15ns | ||
Driver Type Gate Driver | ||
Rise Time 200ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS Compliant | ||
Series 2ED21814S06J | ||
Automotive Standard No | ||
The Infineon 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-14 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creep age and Clearance
Separate logic and power ground
Liens connexes
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