Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 20 V, DSO

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Sous-total (1 bobine de 2500 unités)*

1 002,50 €

(TVA exclue)

1 212,50 €

(TVA incluse)

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Prix par unité
la bobine*
2500 +0,401 €1 002,50 €

*Prix donné à titre indicatif

N° de stock RS:
226-6019
Référence fabricant:
2ED2106S06FXUMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Output Current

290mA

Pin Count

8

Package Type

DSO

Fall Time

80ns

Driver Type

MOSFET

Number of Outputs

2

Rise Time

100ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Width

3.9 mm

Height

1.72mm

Length

4.9mm

Series

2ED2106S06F

Standards/Approvals

No

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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