Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 20 V, DSO
- N° de stock RS:
- 226-6019
- Référence fabricant:
- 2ED2106S06FXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
1 002,50 €
(TVA exclue)
1 212,50 €
(TVA incluse)
Ajouter 2500 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 25 septembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,401 € | 1 002,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 226-6019
- Référence fabricant:
- 2ED2106S06FXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 80ns | |
| Package Type | DSO | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Height | 1.72mm | |
| Width | 3.9 mm | |
| Length | 4.9mm | |
| Series | 2ED2106S06F | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 80ns | ||
Package Type DSO | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 100ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Height 1.72mm | ||
Width 3.9 mm | ||
Length 4.9mm | ||
Series 2ED2106S06F | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2106S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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