Infineon, Gate Driver 2, 290 mA 8-Pin 20 V, DSO-8
- N° de stock RS:
- 258-0605
- Référence fabricant:
- 2ED21091S06FXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
1 312,50 €
(TVA exclue)
1 587,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,525 € | 1 312,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0605
- Référence fabricant:
- 2ED21091S06FXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | DSO-8 | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 2ED21091S6F | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type DSO-8 | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 2ED21091S6F | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels
Liens connexes
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