onsemi MOSFET Gate Driver 8-Pin 22 V, SOIC

Sous-total (1 bobine de 2500 unités)*

6 047,50 €

(TVA exclue)

7 317,50 €

(TVA incluse)

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  • Expédition à partir du 24 juin 2026
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Unité
Prix par unité
la bobine*
2500 +2,419 €6 047,50 €

*Prix donné à titre indicatif

N° de stock RS:
244-9166
Référence fabricant:
NCV57081CDR2G
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Pin Count

8

Fall Time

13ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

30ns

Minimum Supply Voltage

22V

Maximum Supply Voltage

22V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

NCV57

Standards/Approvals

No

Mount Type

PCB

Automotive Standard

No

The ON Semiconductor high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow−body SOIC−8 package.

High Peak Output Current (+6.5 A/−6.5 A)

Low Clamp Voltage Drop Eliminates the Need of Negative Power

Supply to Prevent Spurious Gate Turn−on (Version A)

Short Propagation Delays with Accurate Matching

IGBT/MOSFET Gate Clamping during Short Circuit

IGBT/MOSFET Gate Active Pull Down

Tight UVLO Thresholds for Bias Flexibility

Wide Bias Voltage Range including Negative VEE2 (Version B)

3.3 V, 5 V, and 15 V Logic Input

3.75 kVRMS VISO (I−O) (to meet UL1577 Requirements)

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