STMicroelectronics L6387ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8
- N° de stock RS:
- 152-015
- Référence fabricant:
- L6387ED013TR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 5 unités)*
6,36 €
(TVA exclue)
7,695 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 430 unité(s) expédiée(s) à partir du 20 juillet 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 1,272 € | 6,36 € |
| 50 - 245 | 1,24 € | 6,20 € |
| 250 - 495 | 1,212 € | 6,06 € |
| 500 + | 1,132 € | 5,66 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-015
- Référence fabricant:
- L6387ED013TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Package Type | SO-8 | |
| Fall Time | 30ns | |
| Driver Type | High Side | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6387ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Package Type SO-8 | ||
Fall Time 30ns | ||
Driver Type High Side | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Series L6387ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- Pays d'origine :
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.
Internal bootstrap diode
Outputs in phase with inputs
Interlocking function
Liens connexes
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