STMicroelectronics L6385ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17V, SO-8
- N° de stock RS:
- 152-012
- Référence fabricant:
- L6385ED013TR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 5 unités)*
5,51 €
(TVA exclue)
6,665 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 495 unité(s) expédiée(s) à partir du 20 juillet 2026
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 5 - 45 | 1,102 € | 5,51 € |
| 50 - 245 | 1,076 € | 5,38 € |
| 250 - 495 | 1,048 € | 5,24 € |
| 500 + | 0,982 € | 4,91 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 152-012
- Référence fabricant:
- L6385ED013TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SO-8 | |
| Driver Type | High Side | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Maximum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Series | L6385ED013TR | |
| Standards/Approvals | RoHS Compliant | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SO-8 | ||
Driver Type High Side | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Maximum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Series L6385ED013TR | ||
Standards/Approvals RoHS Compliant | ||
Mount Type Surface | ||
- Pays d'origine :
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half bridge configurations.
Undervoltage lockout on lower and upper driving section
Internal bootstrap diode
Outputs in phase with inputs
Liens connexes
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