Infineon 16 kB Serial-SPI Serial (SPI) Automotive FRAM 8-Pin SOIC-8, FM25C160B-G
- N° de stock RS:
- 273-7384
- Référence fabricant:
- FM25C160B-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 97 unités)*
100,395 €
(TVA exclue)
121,444 €
(TVA incluse)
Ajouter 97 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 1 843 unité(s) expédiée(s) à partir du 23 février 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 97 - 97 | 1,035 € | 100,40 € |
| 194 + | 1,009 € | 97,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7384
- Référence fabricant:
- FM25C160B-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Serial (SPI) Automotive FRAM | |
| Memory Size | 16kB | |
| Organisation | 2k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 15MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Minimum Operating Temperature | 40°C | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Minimum Supply Voltage | 4.5V | |
| Number of Words | 2k | |
| Number of Bits per Word | 8 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Serial (SPI) Automotive FRAM | ||
Memory Size 16kB | ||
Organisation 2k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 15MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Minimum Operating Temperature 40°C | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Minimum Supply Voltage 4.5V | ||
Number of Words 2k | ||
Number of Bits per Word 8 | ||
- Pays d'origine :
- TH
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
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