Infineon 16kbit Serial-SPI FRAM Memory 8-Pin SOIC, FM25C160B-GTR
- N° de stock RS:
- 215-5781
- Référence fabricant:
- FM25C160B-GTR
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
8,78 €
(TVA exclue)
10,625 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- Plus 2 255 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,756 € | 8,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-5781
- Référence fabricant:
- FM25C160B-GTR
- Fabricant:
- Infineon
Spécifications
Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 16kbit | |
| Organisation | 2K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 5ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Width | 3.98mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | +85 °C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 2 K | |
| Minimum Operating Supply Voltage | 4.5 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 16kbit | ||
Organisation 2K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 5ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 5.5 V | ||
Width 3.98mm | ||
Height 1.48mm | ||
Maximum Operating Temperature +85 °C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 2 K | ||
Minimum Operating Supply Voltage 4.5 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
The Cypress Semiconductor FM25C160B is a 16-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
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