Infineon 16 kB Serial-SPI FRAM 8-Pin SOIC-8
- N° de stock RS:
- 273-7315
- Référence fabricant:
- CY15B016Q-SXE
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,82 €
(TVA exclue)
4,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 1,91 € | 3,82 € |
| 10 - 18 | 1,705 € | 3,41 € |
| 20 - 48 | 1,66 € | 3,32 € |
| 50 - 98 | 1,63 € | 3,26 € |
| 100 + | 1,465 € | 2,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7315
- Référence fabricant:
- CY15B016Q-SXE
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 16kB | |
| Product Type | FRAM | |
| Organisation | 2k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 16MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 3V | |
| Number of Words | 2k | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 16kB | ||
Product Type FRAM | ||
Organisation 2k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 16MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 3V | ||
Number of Words 2k | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
AEC Q100 Grade 1 compliant
Sophisticated write protection scheme
Software protection using write disable instruction
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