Infineon 256 kB FRAM 28-Pin SOIC-28, FM18W08-SGTR
- N° de stock RS:
- 273-5303
- Référence fabricant:
- FM18W08-SGTR
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
10 731,00 €
(TVA exclue)
12 985,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 10,731 € | 10 731,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5303
- Référence fabricant:
- FM18W08-SGTR
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 32k | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 32k | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
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