Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM28V020-SG

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12,77 €

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15,45 €

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N° de stock RS:
125-4229
Référence fabricant:
FM28V020-SG
Fabricant:
Infineon
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Marque

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Length

18.11mm

Maximum Operating Supply Voltage

3.6 V

Width

7.62mm

Height

2.37mm

Maximum Operating Temperature

+85 °C

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Minimum Operating Supply Voltage

2 V

Number of Words

32K

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Page mode operation
Advanced high-reliability ferroelectric process
SRAM compatible
Industry-standard 32K x 8 SRAM pinout
70-ns access time, 140-ns cycle time
Superior to battery-backed SRAM modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
Low power consumption
Active current 5 mA (typ)
Standby current 90 μA (typ)
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages:
28-pin small outline integrated circuit (SOIC) package
28-pin thin small outline package (TSOP) Type I
32-pin thin small outline package (TSOP) Type I


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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