Infineon 256 kB Parallel FRAM 28-Pin SOIC

Offre groupée disponible

Sous-total (1 tube de 27 unités)*

269,244 €

(TVA exclue)

325,782 €

(TVA incluse)

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  • Plus 108 unité(s) expédiée(s) à partir du 10 février 2026
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Unité
Prix par unité
le tube*
27 - 279,972 €269,24 €
54 - 819,842 €265,73 €
108 - 2439,075 €245,03 €
270 - 4868,842 €238,73 €
513 +8,621 €232,77 €

*Prix donné à titre indicatif

N° de stock RS:
188-5394
Référence fabricant:
FM18W08-SG
Fabricant:
Infineon
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Marque

Infineon

Product Type

FRAM

Memory Size

256kB

Organisation

32K x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mount Type

Surface

Maximum Clock Frequency

1MHz

Package Type

SOIC

Pin Count

28

Width

7.62 mm

Standards/Approvals

No

Height

2.37mm

Length

18.11mm

Maximum Operating Temperature

85°C

Number of Words

32k

Automotive Standard

AEC-Q100

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

5.5V

Pays d'origine :
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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