Infineon 64 kB FRAM 8-Pin SOIC
- N° de stock RS:
- 181-7438
- Référence fabricant:
- CY15B064J-SXE
- Fabricant:
- Infineon
Sous-total (1 tube de 97 unités)*
302,64 €
(TVA exclue)
366,66 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le tube* |
|---|---|---|
| 97 + | 3,12 € | 302,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 181-7438
- Référence fabricant:
- CY15B064J-SXE
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | FRAM | |
| Memory Size | 64kB | |
| Organisation | 8K x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Maximum Clock Frequency | 1MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Height | 1.5mm | |
| Length | 3.8mm | |
| Standards/Approvals | No | |
| Width | 4.8 mm | |
| Maximum Operating Temperature | 125°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 8K | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type FRAM | ||
Memory Size 64kB | ||
Organisation 8K x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Maximum Clock Frequency 1MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Height 1.5mm | ||
Length 3.8mm | ||
Standards/Approvals No | ||
Width 4.8 mm | ||
Maximum Operating Temperature 125°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 8K | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2V | ||
- Pays d'origine :
- US
64-Kbit ferro electric random access memory (F-RAM) logically organized as 8K x 8
High-endurance 10 trillion (1013) read/writes
121-year data retention (See the Data Retention and Endurance table)
No Delay™ writes
Advanced high-reliability ferro electric process
Fast 2-wire Serial interface (I2C)
Up to 1-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
120 A (typ) active current at 100 kHz
6 A (typ) standby current
Voltage operation: VDD = 3.0 V to 3.6 V
Automotive-E temperature: –40 C to +125 C
8-pin small outline integrated circuit (SOIC) package
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