Microchip 4Mbit SPI Flash Memory 8-Pin SOIC, SST25VF040B-50-4I-SAF-T
- N° de stock RS:
- 264-8830
- Référence fabricant:
- SST25VF040B-50-4I-SAF-T
- Fabricant:
- Microchip
Sous-total (1 bobine de 3300 unités)*
3 184,50 €
(TVA exclue)
3 854,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3300 + | 0,965 € | 3 184,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 264-8830
- Référence fabricant:
- SST25VF040B-50-4I-SAF-T
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Memory Size | 4Mbit | |
| Interface Type | SPI | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Memory Size 4Mbit | ||
Interface Type SPI | ||
Package Type SOIC | ||
Pin Count 8 | ||
The Microchip serial flash memory features a four-wire, SPI compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF040B device is enhanced with improved operating frequency for lower power consumption. This SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS Super flash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. This device significantly improve performance and reliability, while lowering power consumption.
SPI Compatible: Mode 0 and Mode 3
Supports 50 MHz SPI clock
Active Read Current: 10 mA (typical)
Program & Erase Current: 30mA (max)
Standby Current: 5 μA (typical)
Chip-Erase Time: 35 ms (typical)
Sector-/Block-Erase Time: 18 ms (typical)
Byte-Program Time: 7 μs (typical)
RoHS compliant
Supports 50 MHz SPI clock
Active Read Current: 10 mA (typical)
Program & Erase Current: 30mA (max)
Standby Current: 5 μA (typical)
Chip-Erase Time: 35 ms (typical)
Sector-/Block-Erase Time: 18 ms (typical)
Byte-Program Time: 7 μs (typical)
RoHS compliant