Microchip Split Gate 4 MB SPI Flash Memory 8-Pin SOIC, SST25VF040B-50-4I-SAF-T

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

5,29 €

(TVA exclue)

6,40 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 2 935 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
le paquet*
5 - 451,058 €5,29 €
50 - 951,022 €5,11 €
100 - 2450,994 €4,97 €
250 - 9950,974 €4,87 €
1000 +0,956 €4,78 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
264-8831
Référence fabricant:
SST25VF040B-50-4I-SAF-T
Fabricant:
Microchip
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Microchip

Memory Size

4MB

Product Type

Flash Memory

Interface Type

SPI

Package Type

SOIC

Pin Count

8

Organisation

512k x 8

Maximum Clock Frequency

50MHz

Mount Type

Surface

Cell Type

Split Gate

Minimum Supply Voltage

2.3V

Maximum Supply Voltage

3.6V

Timing Type

Synchronous

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

RoHS, JEDEC

Length

6mm

Width

5 mm

Series

SST25VF

Supply Current

15mA

Automotive Standard

No

The Microchip serial flash memory features a four-wire, SPI compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF040B device is enhanced with improved operating frequency for lower power consumption. This SPI serial flash memory is manufactured with SST proprietary, high-performance CMOS Super flash technology. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. This device significantly improve performance and reliability, while lowering power consumption.

SPI Compatible: Mode 0 and Mode 3

Supports 50 MHz SPI clock

Active Read Current: 10 mA (typical)

Program & Erase Current: 30mA (max)

Standby Current: 5 μA (typical)

Chip-Erase Time: 35 ms (typical)

Sector-/Block-Erase Time: 18 ms (typical)

Byte-Program Time: 7 μs (typical)

RoHS compliant

Liens connexes