Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA
- N° de stock RS:
- 188-2549
- Référence fabricant:
- W29N01HVBINA
- Fabricant:
- Winbond
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 188-2549
- Référence fabricant:
- W29N01HVBINA
- Fabricant:
- Winbond
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Winbond | |
| Product Type | Flash Memory | |
| Memory Size | 1GB | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Mount Type | Surface | |
| Cell Type | SLC NAND | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 11.1mm | |
| Standards/Approvals | No | |
| Height | 0.6mm | |
| Number of Words | 128M | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 25μs | |
| Series | W29N01HVBINA | |
| Supply Current | 35mA | |
| Sélectionner tout | ||
|---|---|---|
Marque Winbond | ||
Product Type Flash Memory | ||
Memory Size 1GB | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Mount Type Surface | ||
Cell Type SLC NAND | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 11.1mm | ||
Standards/Approvals No | ||
Height 0.6mm | ||
Number of Words 128M | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 25μs | ||
Series W29N01HVBINA | ||
Supply Current 35mA | ||
Density : 1Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Lowest power consumption
Read: 25mA(typ.3V),
Program/Erase: 25mA(typ.3V),
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
48-ball VFBGA
63-ball VFBGA
1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
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