Winbond SLC NAND 4Gbit Parallel Flash Memory 63-Pin VFBGA, W29N04GVBIAF
- N° de stock RS:
- 188-2878
- Référence fabricant:
- W29N04GVBIAF
- Fabricant:
- Winbond
Offre groupée disponible
Sous-total (1 unité)*
11,31 €
(TVA exclue)
13,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 6 unité(s) expédiée(s) à partir du 15 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 11,31 € |
| 10 - 24 | 11,02 € |
| 25 - 49 | 10,72 € |
| 50 - 99 | 10,45 € |
| 100 + | 10,19 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-2878
- Référence fabricant:
- W29N04GVBIAF
- Fabricant:
- Winbond
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Winbond | |
| Memory Size | 4Gbit | |
| Interface Type | Parallel | |
| Package Type | VFBGA | |
| Pin Count | 63 | |
| Organisation | 512M x 8 bit | |
| Mounting Type | Surface Mount | |
| Cell Type | SLC NAND | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Length | 11.1mm | |
| Height | 0.6mm | |
| Width | 9.1mm | |
| Dimensions | 11.1 x 9.1 x 0.6mm | |
| Number of Bits per Word | 8bit | |
| Maximum Operating Temperature | +85 °C | |
| Maximum Random Access Time | 25µs | |
| Number of Words | 512M | |
| Minimum Operating Temperature | -40 °C | |
| Series | W29N | |
| Sélectionner tout | ||
|---|---|---|
Marque Winbond | ||
Memory Size 4Gbit | ||
Interface Type Parallel | ||
Package Type VFBGA | ||
Pin Count 63 | ||
Organisation 512M x 8 bit | ||
Mounting Type Surface Mount | ||
Cell Type SLC NAND | ||
Minimum Operating Supply Voltage 2.7 V | ||
Maximum Operating Supply Voltage 3.6 V | ||
Length 11.1mm | ||
Height 0.6mm | ||
Width 9.1mm | ||
Dimensions 11.1 x 9.1 x 0.6mm | ||
Number of Bits per Word 8bit | ||
Maximum Operating Temperature +85 °C | ||
Maximum Random Access Time 25µs | ||
Number of Words 512M | ||
Minimum Operating Temperature -40 °C | ||
Series W29N | ||
Density : 4Gbit (Single chip solution)
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
Vcc : 2.7V to 3.6V
Bus width : x8
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 4G-bit/512M-byte
Page size
2,112 bytes (2048 + 64 bytes)
Block size
64 pages (128K + 4K bytes)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles(1)
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for Block Lock feature
Lowest power consumption
Read: 25mA(typ.)
Program/Erase: 25mA(typ.)
CMOS standby: 10uA(typ.)
Space Efficient Packaging
48-pin standard TSOP1
63-ball VFBGA
4Gb SLC NAND Flash Memory with uniform 2KB+64B page size.
Bus Width: x8
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area
Random Read: 25us
Page Program Time: 250us(typ.)
Block Erase Time: 2ms(typ.)
Support OTP Memory Area