Infineon BFP720H6327XTSA1 Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- N° de stock RS:
- 897-7282
- Référence fabricant:
- BFP720H6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 15 unités)*
6,89 €
(TVA exclue)
8,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 885 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 + | 0,459 € | 6,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 897-7282
- Référence fabricant:
- BFP720H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 160 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Width | 2.1mm | |
| Standards/Approvals | No | |
| Series | BFP720 | |
| Height | 900μm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 160 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Width 2.1mm | ||
Standards/Approvals No | ||
Series BFP720 | ||
Height 900μm | ||
Automotive Standard No | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Liens connexes
- Infineon Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP650FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343