Infineon Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- N° de stock RS:
- 165-8077
- Référence fabricant:
- BFP720H6327XTSA1
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 165-8077
- Référence fabricant:
- BFP720H6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 45GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | No | |
| Width | 2.1mm | |
| Series | BFP720 | |
| Height | 900μm | |
| Length | 2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 45GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals No | ||
Width 2.1mm | ||
Series BFP720 | ||
Height 900μm | ||
Length 2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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