Infineon RF Bipolar Transistor, 35 mA NPN, 15 V, 3-Pin TSFP-3-1
- N° de stock RS:
- 261-3953
- Référence fabricant:
- BFR360FH6765XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
336,00 €
(TVA exclue)
408,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 6 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,112 € | 336,00 € |
| 6000 - 6000 | 0,101 € | 303,00 € |
| 9000 + | 0,091 € | 273,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 261-3953
- Référence fabricant:
- BFR360FH6765XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 15V | |
| Package Type | TSFP-3-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 15V | |
| Maximum Transition Frequency ft | 14GHz | |
| Maximum Power Dissipation Pd | 210mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum DC Current Gain hFE | 90 | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.55mm | |
| Length | 1.2mm | |
| Standards/Approvals | RoHS | |
| Width | 1.2mm | |
| Series | BFR | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 15V | ||
Package Type TSFP-3-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 15V | ||
Maximum Transition Frequency ft 14GHz | ||
Maximum Power Dissipation Pd 210mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum DC Current Gain hFE 90 | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 0.55mm | ||
Length 1.2mm | ||
Standards/Approvals RoHS | ||
Width 1.2mm | ||
Series BFR | ||
Automotive Standard No | ||
The Infineon low profile silicon NPN RF bipolar transistor, is a low noise device based on Si that is part of Infineon’s established third generation RF bipolar transistor family. Its low current and low voltage characteristics make the device suitable for low current amplifiers. It remains cost competitive without compromising on ease of use.
Low noise amplifiers for FM and AM radio
Minimum noise figure
Liens connexes
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