onsemi FDB38N30U Digital Transistor N-Channel Surface, 2-Pin
- N° de stock RS:
- 186-8142
- Référence fabricant:
- FDB38N30U
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
24,38 €
(TVA exclue)
29,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 135 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 4,876 € | 24,38 € |
| 50 - 95 | 4,202 € | 21,01 € |
| 100 + | 3,644 € | 18,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-8142
- Référence fabricant:
- FDB38N30U
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Mount Type | Surface | |
| Maximum Power Dissipation Pd | 313W | |
| Transistor Polarity | N-Channel | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.58mm | |
| Series | UniFET Ultra FRFET MOSFET | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Mount Type Surface | ||
Maximum Power Dissipation Pd 313W | ||
Transistor Polarity N-Channel | ||
Pin Count 2 | ||
Maximum Operating Temperature 150°C | ||
Height 4.58mm | ||
Series UniFET Ultra FRFET MOSFET | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
RDS(on) = 120mΩ ( Max.)@ VGS = 10V, ID = 19A
Low gate charge ( Typ. 56nC)
Low Crss ( Typ. 55pF)
Applications
This product is general usage and suitable for many different applications.
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