onsemi FDMA430NZ Digital Transistor N-Channel Surface, 6-Pin
- N° de stock RS:
- 186-8181
- Référence fabricant:
- FDMA430NZ
- Fabricant:
- onsemi
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 186-8181
- Référence fabricant:
- FDMA430NZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Power Dissipation Pd | 2.4W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 6 | |
| Length | 2mm | |
| Standards/Approvals | RoHS Compliant | |
| Series | PowerTrench | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Power Dissipation Pd 2.4W | ||
Transistor Polarity N-Channel | ||
Maximum Operating Temperature 150°C | ||
Pin Count 6 | ||
Length 2mm | ||
Standards/Approvals RoHS Compliant | ||
Series PowerTrench | ||
Automotive Standard No | ||
- Pays d'origine :
- TH
This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
HBM ESD protection level > 2.5k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Applications
This product is general usage and suitable for many different applications.
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