STMicroelectronics Transistor, 8 A PNP, 80 V, 3-Pin DPAK
- N° de stock RS:
- 102-4115
- Référence fabricant:
- MJD45H11T4
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 102-4115
- Référence fabricant:
- MJD45H11T4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 80V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum Operating Temperature | 0°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Width | 10.1 mm | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 80V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 80V | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Power Dissipation Pd 20W | ||
Minimum Operating Temperature 0°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Width 10.1 mm | ||
Length 6.7mm | ||
Automotive Standard No | ||
PNP Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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