onsemi MJD45H11G Transistor, -8 A PNP, -80 V, 3-Pin DPAK
- N° de stock RS:
- 838-633
- Référence fabricant:
- MJD45H11G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 sachet de 10 unités)*
6,52 €
(TVA exclue)
7,89 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 10 - 90 | 0,652 € | 6,52 € |
| 100 - 490 | 0,574 € | 5,74 € |
| 500 - 990 | 0,515 € | 5,15 € |
| 1000 + | 0,443 € | 4,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 838-633
- Référence fabricant:
- MJD45H11G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -8A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -80V | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Minimum DC Current Gain hFE | 40 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Transition Frequency ft | 40MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | MJD45H | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -8A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -80V | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Minimum DC Current Gain hFE 40 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Transition Frequency ft 40MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series MJD45H | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The onsemi semiconductor device offers power management for switching applications, specifically engineered for reliable performance in various circuits.
Supports a maximum collector-emitter voltage of 80 Vdc for robust applications
Delivers a continuous collector current of 8 Adc, ensuring effective power handling
Features low collector-emitter saturation voltage for enhanced efficiency
Design incorporates complementary pairs, simplifying circuit designs
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