Infineon SRAM- 64 MB
- N° de stock RS:
- 273-5286
- Référence fabricant:
- CY62187EV30LL-55BAXI
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
69,26 €
(TVA exclue)
83,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 80,00 €
Temporairement en rupture de stock
- 2 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 69,26 € |
| 10 - 24 | 62,35 € |
| 25 - 49 | 59,71 € |
| 50 + | 58,52 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5286
- Référence fabricant:
- CY62187EV30LL-55BAXI
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 64MB | |
| Product Type | SRAM | |
| Organisation | 4M x 16 | |
| Number of Words | 4000K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 55ns | |
| Minimum Supply Voltage | 0.3V | |
| Mount Type | Surface | |
| Maximum Supply Voltage | 3.9V | |
| Minimum Operating Temperature | -40°C | |
| Package Type | FBGA | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 48 | |
| Length | 9.5mm | |
| Width | 1.4 mm | |
| Series | CY62187EV30 | |
| Standards/Approvals | RoHS | |
| Height | 8mm | |
| Supply Current | 55mA | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 64MB | ||
Product Type SRAM | ||
Organisation 4M x 16 | ||
Number of Words 4000K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 55ns | ||
Minimum Supply Voltage 0.3V | ||
Mount Type Surface | ||
Maximum Supply Voltage 3.9V | ||
Minimum Operating Temperature -40°C | ||
Package Type FBGA | ||
Maximum Operating Temperature 85°C | ||
Pin Count 48 | ||
Length 9.5mm | ||
Width 1.4 mm | ||
Series CY62187EV30 | ||
Standards/Approvals RoHS | ||
Height 8mm | ||
Supply Current 55mA | ||
The Infineon SRAM is a high performance CMOS static RAM organized as 4M words by 16 bits. This device features an advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ in portable applications such as cellular phones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
Very high speed
Ultra low active power
Ultra low standby power
CMOS for optimum speed and power
Automatic power down when deselected