Infineon SRAM- 8 MB
- N° de stock RS:
- 273-5254
- Référence fabricant:
- CY14B108N-ZSP45XI
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
43,21 €
(TVA exclue)
52,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 6 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 43,21 € |
| 10 - 24 | 42,05 € |
| 25 - 49 | 40,94 € |
| 50 - 74 | 39,89 € |
| 75 + | 38,89 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5254
- Référence fabricant:
- CY14B108N-ZSP45XI
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | SRAM | |
| Memory Size | 8MB | |
| Organisation | 512k x 16 | |
| Number of Words | 512K | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 45ns | |
| Minimum Supply Voltage | 0.5V | |
| Maximum Supply Voltage | 4.1V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 54 | |
| Standards/Approvals | RoHS | |
| Series | CY14B108N | |
| Width | 1.05 mm | |
| Length | 22.52mm | |
| Height | 10.26mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type SRAM | ||
Memory Size 8MB | ||
Organisation 512k x 16 | ||
Number of Words 512K | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 45ns | ||
Minimum Supply Voltage 0.5V | ||
Maximum Supply Voltage 4.1V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP | ||
Maximum Operating Temperature 85°C | ||
Pin Count 54 | ||
Standards/Approvals RoHS | ||
Series CY14B108N | ||
Width 1.05 mm | ||
Length 22.52mm | ||
Height 10.26mm | ||
Automotive Standard No | ||
The Infineon SRAM is a fast static RAM with a non volatile element in each memory cell. The memory is organized as 1024 Kbytes of 8 bits each or 512 K words of 16 bits each. The embedded non volatile elements incorporate Quantum Trap technology, producing the worlds most reliable non volatile memory. The SRAM provides infinite read and write cycles, while independent non volatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the non volatile elements takes place automatically at power down. On power up, data is restored to the SRAM from the non volatile memory. Both the STORE and RECALL operations are also available under software control.
Pb free
RoHS compliant
20 year data retention
Infinite read write and recall cycles
1 million STORE cycles to QuantumTrap
RECALL to SRAM initiated by software or power up