Infineon SRAM, CY7C1021D-10VXI- 1 MB

Voir l’ensemble des SRAM
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N° de stock RS:
194-8912
Référence fabricant:
CY7C1021D-10VXI
Fabricant:
Infineon
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Marque

Infineon

Product Type

SRAM

Memory Size

1MB

Organisation

64K x 16 bit

Number of Words

64K

Number of Bits per Word

16

Maximum Random Access Time

10ns

Minimum Supply Voltage

5V

Timing Type

Asynchronous

Mount Type

Through Hole

Maximum Supply Voltage

3.6V

Package Type

SOJ

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Pin Count

44

Width

10.29 mm

Length

28.7mm

Standards/Approvals

RoHS

Height

3.05mm

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15). Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7.

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