Infineon SRAM Memory Chip, CY7C1021D-10VXI- 1Mbit

Voir l’ensemble des SRAM
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
194-8911
Référence fabricant:
CY7C1021D-10VXI
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Memory Size

1Mbit

Organisation

64k x 16 bit

Number of Words

64k

Number of Bits per Word

16bit

Maximum Random Access Time

10ns

Address Bus Width

16bit

Clock Frequency

1MHz

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOJ

Pin Count

44

Dimensions

1.13 x 0.405 x 0.12in

Height

3.05mm

Maximum Operating Supply Voltage

5 V

Maximum Operating Temperature

+85 °C

Length

28.7mm

Minimum Operating Temperature

-40 °C

Width

10.29mm

This device has an automatic power down feature that significantly reduces power consumption when deselected. The input and output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW). Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A15).

Liens connexes