Intelligent Memory IME5116SDBETG-75 SDRAM 512 MB Surface, 54-Pin 16 bit FBGA
- N° de stock RS:
- 588-664
- Référence fabricant:
- IME5116SDBETG-75
- Fabricant:
- Intelligent Memory
Sous-total (1 unité)*
7,74 €
(TVA exclue)
9,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 108 unité(s) expédiée(s) à partir du 16 mars 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 7,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 588-664
- Référence fabricant:
- IME5116SDBETG-75
- Fabricant:
- Intelligent Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 512MB | |
| Organisation | 32M x 16 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 166MHz | |
| Number of Bits per Word | 72 | |
| Maximum Random Access Time | 7.5ns | |
| Number of Words | 16777216 Words | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Pin Count | 54 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | IME51(08/16)SDBET | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | AEC-Q100 | |
| Supply Current | 170mA | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 3V | |
| Sélectionner tout | ||
|---|---|---|
Marque Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 512MB | ||
Organisation 32M x 16 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 166MHz | ||
Number of Bits per Word 72 | ||
Maximum Random Access Time 7.5ns | ||
Number of Words 16777216 Words | ||
Mount Type Surface | ||
Package Type FBGA | ||
Pin Count 54 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series IME51(08/16)SDBET | ||
Standards/Approvals JEDEC | ||
Automotive Standard AEC-Q100 | ||
Supply Current 170mA | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 3V | ||
- Pays d'origine :
- TW
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 16Mbit x 8 (5108) or 4 banks x 8Mbit x 16 (5116). It achieves high-speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring efficient and reliable performance.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command
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