Intelligent Memory IME5108SDBETG-75I SDRAM 512 MB Surface, 54-Pin 16 bit FBGA
- N° de stock RS:
- 588-663
- Référence fabricant:
- IME5108SDBETG-75I
- Fabricant:
- Intelligent Memory
Sous-total (1 unité)*
16,15 €
(TVA exclue)
19,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 9 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 + | 16,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 588-663
- Référence fabricant:
- IME5108SDBETG-75I
- Fabricant:
- Intelligent Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Intelligent Memory | |
| Product Type | SDRAM | |
| Memory Size | 512MB | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 64 | |
| Maximum Clock Frequency | 166MHz | |
| Maximum Random Access Time | 6ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Pin Count | 54 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | IME51 | |
| Standards/Approvals | JEDEC | |
| Supply Current | 170mA | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 3V | |
| Sélectionner tout | ||
|---|---|---|
Marque Intelligent Memory | ||
Product Type SDRAM | ||
Memory Size 512MB | ||
Data Bus Width 16bit | ||
Number of Bits per Word 64 | ||
Maximum Clock Frequency 166MHz | ||
Maximum Random Access Time 6ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA | ||
Pin Count 54 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series IME51 | ||
Standards/Approvals JEDEC | ||
Supply Current 170mA | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 3V | ||
- Pays d'origine :
- TW
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 16Mbit x 8 (5108) or 4 banks x 8Mbit x 16 (5116). It achieves high-speed data transfer rates up to 166 MHz by using a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring fast and reliable operation.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command
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