Intelligent Memory IM2508SDBBTG-6 SDRAM 256 MB Surface, 54-Pin 16 bit FBGA
- N° de stock RS:
- 588-659
- Référence fabricant:
- IM2508SDBBTG-6
- Fabricant:
- Intelligent Memory
Sous-total (1 paquet de 2 unités)*
5,06 €
(TVA exclue)
6,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 20 unité(s) expédiée(s) à partir du 16 avril 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 2,53 € | 5,06 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 588-659
- Référence fabricant:
- IM2508SDBBTG-6
- Fabricant:
- Intelligent Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Intelligent Memory | |
| Memory Size | 256MB | |
| Product Type | SDRAM | |
| Data Bus Width | 16bit | |
| Address Bus Width | 13bit | |
| Maximum Clock Frequency | 166MHz | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 5ns | |
| Number of Words | 33554432 | |
| Mount Type | Surface | |
| Package Type | FBGA | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 54 | |
| Maximum Operating Temperature | 85°C | |
| Series | IM2508SDBBT | |
| Standards/Approvals | RoHS | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | AEC-Q100 | |
| Supply Current | 110mA | |
| Minimum Supply Voltage | 3V | |
| Sélectionner tout | ||
|---|---|---|
Marque Intelligent Memory | ||
Memory Size 256MB | ||
Product Type SDRAM | ||
Data Bus Width 16bit | ||
Address Bus Width 13bit | ||
Maximum Clock Frequency 166MHz | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 5ns | ||
Number of Words 33554432 | ||
Mount Type Surface | ||
Package Type FBGA | ||
Minimum Operating Temperature -40°C | ||
Pin Count 54 | ||
Maximum Operating Temperature 85°C | ||
Series IM2508SDBBT | ||
Standards/Approvals RoHS | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard AEC-Q100 | ||
Supply Current 110mA | ||
Minimum Supply Voltage 3V | ||
- Pays d'origine :
- TW
The Intelligent Memory Four bank Synchronous DRAM is organized as 4 banks x 8Mbit x 8. It achieves high-speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and synchronizes the output data to the system clock, ensuring efficient and reliable performance.
Power down mode
Auto refresh and self refresh
Automatic and controlled precharge command
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