Vishay 650 V 4 A Rectifier & Schottky Diode SiC Merged PIN Schottky 3-Pin D2PAK VS-3C04ET07S2L-M3
- N° de stock RS:
- 279-9427
- Référence fabricant:
- VS-3C04ET07S2L-M3
- Fabricant:
- Vishay
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 279-9427
- Référence fabricant:
- VS-3C04ET07S2L-M3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | VS-3C04ET07 | |
| Rectifier Type | SiC Merged PIN Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 25μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 29A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | UL, RoHS | |
| Height | 4.83mm | |
| Width | 11.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series VS-3C04ET07 | ||
Rectifier Type SiC Merged PIN Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 25μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 29A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.85V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals UL, RoHS | ||
Height 4.83mm | ||
Width 11.3mm | ||
Automotive Standard No | ||
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
RoHS compliant
Halogen free
UL 94 V-0 flammability rating
Very low profile
Temperature invariant switching behaviour
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