STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL STPSC30G12WLY
- N° de stock RS:
- 275-1366
- Référence fabricant:
- STPSC30G12WLY
- Fabricant:
- STMicroelectronics
Sous-total (1 unité)*
12,82 €
(TVA exclue)
15,51 €
(TVA incluse)
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Unité | Prix par unité |
|---|---|
| 1 + | 12,82 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 275-1366
- Référence fabricant:
- STPSC30G12WLY
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1550A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 41.2mm | |
| Length | 15.9mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1550A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 41.2mm | ||
Length 15.9mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated
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