STMicroelectronics 1200 V 10 A Diode Schottky 2-Pin DO-247 STPSC10H12WL
- N° de stock RS:
- 164-7021
- Référence fabricant:
- STPSC10H12WL
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
4,27 €
(TVA exclue)
5,17 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 130 unité(s) expédiée(s) à partir du 04 mai 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 4,27 € |
| 5 - 9 | 4,17 € |
| 10 - 24 | 4,04 € |
| 25 - 49 | 3,94 € |
| 50 + | 3,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 164-7021
- Référence fabricant:
- STPSC10H12WL
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | DO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 400μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type DO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 400μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Maximum Operating Temperature 175°C | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Automotive Standard No | ||
The SiC diode, available in TO-220AC, DPAK HV, D²PAK and DO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating from -40 °C to 175 °C
Low VF
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