Infineon 1200 V 5 A Diode PG-TO-220
- N° de stock RS:
- 259-1515
- Référence fabricant:
- IDH05G120C5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
87,00 €
(TVA exclue)
105,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 500 unité(s) expédiée(s) à partir du 21 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,74 € | 87,00 € |
| 100 - 200 | 1,531 € | 76,55 € |
| 250 + | 1,444 € | 72,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-1515
- Référence fabricant:
- IDH05G120C5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | PG-TO-220 | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH05G120C5 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 59A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 175μA | |
| Maximum Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type PG-TO-220 | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH05G120C5 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 59A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 175μA | ||
Maximum Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC Schottky diode presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
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