Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220
- N° de stock RS:
- 133-8558
- Référence fabricant:
- IDH20G120C5XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 500 unités)*
1 644,00 €
(TVA exclue)
1 989,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 500 + | 3,288 € | 1 644,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 133-8558
- Référence fabricant:
- IDH20G120C5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 56A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Series | IDH20G120C5 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 630μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 198A | |
| Maximum Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 56A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Series IDH20G120C5 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 630μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 198A | ||
Maximum Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon
The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.
Reduced EMI
Diodes and Rectifiers, Infineon
Liens connexes
- Infineon 1200 V 56 A Diode Schottky 3-Pin TO-220 IDH20G120C5XKSA1
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220
- Infineon 1200 V 11.8 A Diode Schottky 3-Pin TO-220 IDH02G120C5XKSA1
- Infineon 1200 V 31.9 A Diode Schottky 3-Pin TO-220 IDH10G120C5XKSA1
- Infineon 1200 V 22.8 A Diode Schottky 3-Pin TO-220 IDH08G120C5XKSA1
- Infineon 1200 V 5 A Diode PG-TO-220