onsemi 650 V 10 A Diode Schottky 2-Pin TO-247 FFSH1065B-F085
- N° de stock RS:
- 189-0410
- Référence fabricant:
- FFSH1065B-F085
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
40,42 €
(TVA exclue)
48,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 305 unité(s) expédiée(s) à partir du 08 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 8,084 € | 40,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 189-0410
- Référence fabricant:
- FFSH1065B-F085
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 600A | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 2.82mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 160μA | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 600A | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 2.82mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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