onsemi 650 V 8 A Schottky Diode & Rectifier Merged Pin Schottky 2-Pin TO-220-2 UJ3D06508TS
- N° de stock RS:
- 648-516
- Référence fabricant:
- UJ3D06508TS
- Fabricant:
- onsemi
Sous-total (1 sachet de 2 unités)*
7,61 €
(TVA exclue)
9,208 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 000 unité(s) expédiée(s) à partir du 04 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 2 + | 3,805 € | 7,61 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-516
- Référence fabricant:
- UJ3D06508TS
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode & Rectifier | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | UJ3 | |
| Diode Configuration | Single | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 50μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 55A | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.37mm | |
| Width | 4.19 mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Mount Type Through Hole | ||
Product Type Schottky Diode & Rectifier | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series UJ3 | ||
Diode Configuration Single | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 50μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 55A | ||
Maximum Operating Temperature 175°C | ||
Height 15.37mm | ||
Width 4.19 mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 10.16mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS tested
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