onsemi 650 V 4 A Schottky Diode & Rectifier Merged Pin Schottky 2-Pin TO-220-2 UJ3D06504TS
- N° de stock RS:
- 648-513
- Référence fabricant:
- UJ3D06504TS
- Fabricant:
- onsemi
Sous-total (1 sachet de 5 unités)*
5,54 €
(TVA exclue)
6,705 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 980 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 5 + | 1,108 € | 5,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-513
- Référence fabricant:
- UJ3D06504TS
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | UJ3 | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 25A | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 29A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Height | 15.37mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series UJ3 | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 25A | ||
Peak Non-Repetitive Forward Surge Current Ifsm 29A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Height 15.37mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS teste
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