onsemi 650 V 4 A Schottky Diode & Rectifier Merged Pin Schottky 2-Pin TO-220-2 UJ3D06504TS
- N° de stock RS:
- 648-513
- Référence fabricant:
- UJ3D06504TS
- Fabricant:
- onsemi
Sous-total (1 sachet de 5 unités)*
5,54 €
(TVA exclue)
6,705 €
(TVA incluse)
Ajouter 70 unités pour bénéficier d'une livraison gratuite
Temporairement en rupture de stock
- Expédition à partir du 04 juin 2026
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Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 5 + | 1,108 € | 5,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-513
- Référence fabricant:
- UJ3D06504TS
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Schottky Diode & Rectifier | |
| Mount Type | Through Hole | |
| Package Type | TO-220-2 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | UJ3 | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 25A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 29A | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.37mm | |
| Length | 10.16mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 4.19 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Schottky Diode & Rectifier | ||
Mount Type Through Hole | ||
Package Type TO-220-2 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series UJ3 | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 25A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 29A | ||
Maximum Operating Temperature 175°C | ||
Height 15.37mm | ||
Length 10.16mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 4.19 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Easy paralleling
Extremely fast switching not dependent on temperature
No reverse or forward recovery
100% UIS teste
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