Infineon High Side, High Side Power Switch IC
- N° de stock RS:
- 258-7770P
- Référence fabricant:
- BTS51202EKAXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total 50 unités (conditionné en bande continue)*
70,50 €
(TVA exclue)
85,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 2 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 50 - 120 | 1,41 € |
| 125 - 245 | 1,326 € |
| 250 - 495 | 1,228 € |
| 500 + | 0,912 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-7770P
- Référence fabricant:
- BTS51202EKAXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Switch Type | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Topology | High Side | |
| Switch On Resistance RdsOn | 240mΩ | |
| Number of Outputs | 6 | |
| Minimum Supply Voltage | -0.3V | |
| Maximum Supply Voltage | 28V | |
| Operating Current | 2.5A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100 | |
| Series | BTS5120-2EKA | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Switch Type High Side | ||
Product Type Power Switch IC | ||
Power Switch Topology High Side | ||
Switch On Resistance RdsOn 240mΩ | ||
Number of Outputs 6 | ||
Minimum Supply Voltage -0.3V | ||
Maximum Supply Voltage 28V | ||
Operating Current 2.5A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100 | ||
Series BTS5120-2EKA | ||
The Infineon smart high side power switch is embedded in a PG-DSO-14-40 EP exposed pad package, providing protective functions and diagnosis. The power transistor is built by an N channel vertical power MOSFET with charge pump. The device is integrated in Smart 6 technology. It is specially designed to drive lamps as well as LEDs in the harsh automotive environment.
Two channel device
Very low stand by current
Electrostatic discharge protection
Optimized electromagnetic compatibility
Very low power DMOS leakage current in OFF state
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