Infineon High Side, High Side Power Switch IC
- N° de stock RS:
- 258-7051
- Référence fabricant:
- BTS51202EKAXUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2500 unités)*
1 692,50 €
(TVA exclue)
2 047,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,677 € | 1 692,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-7051
- Référence fabricant:
- BTS51202EKAXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 240mΩ | |
| Minimum Supply Voltage | -0.3V | |
| Maximum Supply Voltage | 28V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Operating Current | 2.5A | |
| Standards/Approvals | RoHS | |
| Series | BTS5120-2EKA | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 240mΩ | ||
Minimum Supply Voltage -0.3V | ||
Maximum Supply Voltage 28V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Operating Current 2.5A | ||
Standards/Approvals RoHS | ||
Series BTS5120-2EKA | ||
Automotive Standard AEC-Q100 | ||
The Infineon smart high side power switch is embedded in a PG-DSO-14-40 EP exposed pad package, providing protective functions and diagnosis. The power transistor is built by an N channel vertical power MOSFET with charge pump. The device is integrated in Smart 6 technology. It is specially designed to drive lamps as well as LEDs in the harsh automotive environment.
Two channel device
Very low stand by current
Electrostatic discharge protection
Optimized electromagnetic compatibility
Very low power DMOS leakage current in OFF state
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