onsemi Low Side/High Side 3, High Side Power Switch IC 15-Pin, QFN
- N° de stock RS:
- 195-2474
- Référence fabricant:
- NCP51820AMNTWG
- Fabricant:
- onsemi
Sous-total (1 bobine de 4000 unités)*
3 700,00 €
(TVA exclue)
4 476,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 4 000 unité(s) expédiée(s) à partir du 03 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,925 € | 3 700,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2474
- Référence fabricant:
- NCP51820AMNTWG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Power Switch IC | |
| Power Switch Topology | Low Side/High Side | |
| Power Switch Type | High Side | |
| Power Rating | 0.665W | |
| Number of Inputs | 3 | |
| Mount Type | Surface | |
| Package Type | QFN | |
| Minimum Supply Voltage | 9V | |
| Pin Count | 15 | |
| Maximum Supply Voltage | 17V | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.5mA | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Series | NCP51820 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Power Switch IC | ||
Power Switch Topology Low Side/High Side | ||
Power Switch Type High Side | ||
Power Rating 0.665W | ||
Number of Inputs 3 | ||
Mount Type Surface | ||
Package Type QFN | ||
Minimum Supply Voltage 9V | ||
Pin Count 15 | ||
Maximum Supply Voltage 17V | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.5mA | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Series NCP51820 | ||
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.