ROHM BM3G115MUV-LBE2 High Side, Load Switch Power Switch IC 46-Pin, VQFN046V8080

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Sous-total (1 ruban de 2 unités)*

34,06 €

(TVA exclue)

41,22 €

(TVA incluse)

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  • Plus 100 unité(s) expédiée(s) à partir du 02 mars 2026
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Prix par unité
le ruban*
2 - 817,03 €34,06 €
10 +16,685 €33,37 €

*Prix donné à titre indicatif

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N° de stock RS:
687-350
Référence fabricant:
BM3G115MUV-LBE2
Fabricant:
ROHM
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Marque

ROHM

Power Switch Topology

High Side

Product Type

Power Switch IC

Power Switch Type

Load Switch

Switch On Resistance RdsOn

150mΩ

Number of Outputs

1

Package Type

VQFN046V8080

Minimum Supply Voltage

5.5V

Maximum Supply Voltage

650V

Pin Count

46

Operating Current

12.2A

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

105°C

Standards/Approvals

RoHS

Automotive Standard

No

The ROHM 650 V GaN HEMT Power Stage integrates a silicon driver within original package, significantly reducing parasitic inductance compared to traditional discrete solutions. It delivers a high switching slew rate of up to 150 V/ns, with adjustable gate drive strength to minimize EMI. Built-in protections and additional features help optimize cost and reduce PCB size. Designed for compatibility with major existing controllers, it serves as an efficient replacement for traditional discrete power switches such as super junction MOSFETs.

Wide operating range for VDD pin voltage

Wide operating range for IN pin voltage

Low VDD quiescent and operating current

Low propagation delay

Adjustable gate drive strength

Power good signal output

VDD UVLO protection

Thermal shutdown protection

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