ROHM BM3G115MUV-LBE2 High Side, Load Switch Power Switch IC 46-Pin, VQFN046V8080
- N° de stock RS:
- 687-350
- Référence fabricant:
- BM3G115MUV-LBE2
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
16,99 €
(TVA exclue)
20,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 100 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 8 | 8,495 € | 16,99 € |
| 10 + | 8,32 € | 16,64 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 687-350
- Référence fabricant:
- BM3G115MUV-LBE2
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Power Switch Topology | High Side | |
| Power Switch Type | Load Switch | |
| Product Type | Power Switch IC | |
| Switch On Resistance RdsOn | 150mΩ | |
| Number of Outputs | 1 | |
| Minimum Supply Voltage | 5.5V | |
| Package Type | VQFN046V8080 | |
| Pin Count | 46 | |
| Maximum Supply Voltage | 650V | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 12.2A | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Power Switch Topology High Side | ||
Power Switch Type Load Switch | ||
Product Type Power Switch IC | ||
Switch On Resistance RdsOn 150mΩ | ||
Number of Outputs 1 | ||
Minimum Supply Voltage 5.5V | ||
Package Type VQFN046V8080 | ||
Pin Count 46 | ||
Maximum Supply Voltage 650V | ||
Minimum Operating Temperature -40°C | ||
Operating Current 12.2A | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM 650 V GaN HEMT Power Stage integrates a silicon driver within original package, significantly reducing parasitic inductance compared to traditional discrete solutions. It delivers a high switching slew rate of up to 150 V/ns, with adjustable gate drive strength to minimize EMI. Built-in protections and additional features help optimize cost and reduce PCB size. Designed for compatibility with major existing controllers, it serves as an efficient replacement for traditional discrete power switches such as super junction MOSFETs.
Wide operating range for VDD pin voltage
Wide operating range for IN pin voltage
Low VDD quiescent and operating current
Low propagation delay
Adjustable gate drive strength
Power good signal output
VDD UVLO protection
Thermal shutdown protection
Liens connexes
- ROHM BM3G005MUV-LBE2 High Side VQFN046V8080
- ROHM BM3G107MUV-LBE2 High Side VQFN046V8080
- ROHM BD7J101EFJ-LBE2 Low Side HTSOP-J8
- ROHM BD7J201EFJ-LBE2 Low Side HTSOP-J8
- STMicroelectronics High Side, High Side Power Switch IC
- STMicroelectronics IPS2050HQ High Side, High Side Power Switch IC
- Infineon BTS50452EKAXUMA1 High Side, High Side Power Switch IC
- Infineon BTS50202EKAXUMA2 High Side, High Side Power Switch IC