ROHM BM3G005MUV-LBE2 High Side, High Side Power Switch IC 46-Pin, VQFN046V8080
- N° de stock RS:
- 646-596
- Référence fabricant:
- BM3G005MUV-LBE2
- Fabricant:
- ROHM
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 2 unités)*
25,73 €
(TVA exclue)
31,134 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le ruban* |
|---|---|---|
| 2 - 8 | 12,865 € | 25,73 € |
| 10 + | 12,485 € | 24,97 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 646-596
- Référence fabricant:
- BM3G005MUV-LBE2
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Minimum Supply Voltage | 6.83V | |
| Package Type | VQFN046V8080 | |
| Pin Count | 46 | |
| Maximum Supply Voltage | 650V | |
| Maximum Operating Temperature | 105°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.2mA | |
| Length | 8mm | |
| Height | 1.0mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Series | BM3G005MUV-LB | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Minimum Supply Voltage 6.83V | ||
Package Type VQFN046V8080 | ||
Pin Count 46 | ||
Maximum Supply Voltage 650V | ||
Maximum Operating Temperature 105°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.2mA | ||
Length 8mm | ||
Height 1.0mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Series BM3G005MUV-LB | ||
The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.
Low VDD Quiescent and Operating Current
Low Propagation Delay
High dv/dt Immunity
Adjustable Gate Drive Strength
Power Good Signal Output
VDD UVLO Protection
Thermal Shutdown Protection
Liens connexes
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