Infineon EB 2ED2410 3M MOSFET Gate Driver for Gate Driver, Power MOSFET for Adjustable Wire Protection
- N° de stock RS:
- 273-2062
- Référence fabricant:
- EB2ED24103MTOBO1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
73,79 €
(TVA exclue)
89,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 2 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 73,79 € |
| 5 - 9 | 70,10 € |
| 10 + | 68,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2062
- Référence fabricant:
- EB2ED24103MTOBO1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Management Function | MOSFET Gate Driver | |
| For Use With | Adjustable Wire Protection | |
| Kit Classification | Evaluation Board | |
| Featured Device | Gate Driver, Power MOSFET | |
| Kit Name | EB 2ED2410 3M | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Management Function MOSFET Gate Driver | ||
For Use With Adjustable Wire Protection | ||
Kit Classification Evaluation Board | ||
Featured Device Gate Driver, Power MOSFET | ||
Kit Name EB 2ED2410 3M | ||
273-2062
This evaluation motherboard contains the ISO26262-ready 2ED2410-EM MOSFET gate driver with adjustable I-t wire protection for automotive power distribution with adjustable I-t wire protection. This board is suitable for 12 V and 24 V board nets and contains the OPTIREGTM TLE4296GV50 low drop voltage regulator for providing the 5 V digital supply voltage on this board. With the help of a push button the gate driver can be reset, e.g. from a Safestate mode back to Idle mode or On mode. This board can be used with different daughterboards, which have different OptiMOSTM5 power MOSFET arrangements with and without a dedicated pre-charge path intended for one load channel:
•EB 2ED2410 3D 1BCS:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
•EB 2ED2410 3D 1BCDP:60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with different MOSFET plus shunt daughterboards
•Support of daughterboards with dedicated pre-charge path
•Overcurrent protection with adjustable thresholds
•Adjustable I-t wire protection
•Indicator LEDs
•RESET possibility
Liens connexes
- Infineon EB 2ED2410 3D 1BCDP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCS MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCSP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard
- Infineon EB 2ED2410 3D 1BCD MOSFET Gate Driver for Gate Driver, Power MOSFET for Evaluation Mother/Daughterboards User
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