Infineon EB 2ED2410 3D 1BCDP MOSFET Gate Driver for Gate Driver, Power MOSFET for 2ED2410-EM 24 V Evaluation Motherboard

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102,51 €

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124,04 €

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N° de stock RS:
273-2058
Référence fabricant:
EB2ED24103D1BCDPTOBO1
Fabricant:
Infineon
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Marque

Infineon

Power Management Function

MOSFET Gate Driver

For Use With

2ED2410-EM 24 V Evaluation Motherboard

Kit Classification

Evaluation Board

Featured Device

Gate Driver, Power MOSFET

Kit Name

EB 2ED2410 3D 1BCDP

EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain, pre-charging


This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.

This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.

Following other daughterboards are available:


•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging

Summary of Features


•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min

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