Infineon EB 2ED2410 3D 1BCDP MOSFET for Power MOSFET, Gate Driver for 2ED2410-EM 24 V Evaluation Motherboard
- N° de stock RS:
- 273-2058
- Référence fabricant:
- EB2ED24103D1BCDPTOBO1
- Fabricant:
- Infineon
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105,41 €
(TVA exclue)
127,55 €
(TVA incluse)
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- Plus 2 unité(s) expédiée(s) à partir du 16 novembre 2026
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Unité | Prix par unité | Économie |
|---|---|---|
| 1 - 1 | 105,41 € | - |
| 2 - 4 | 102,71 € | 5,40 € |
| 5 + | 100,14 € | 26,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2058
- Référence fabricant:
- EB2ED24103D1BCDPTOBO1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Power Management Function | MOSFET | |
| Product Type | Gate Driver Module | |
| For Use With | 2ED2410-EM 24 V Evaluation Motherboard | |
| Kit Classification | Evaluation Board | |
| Featured Device | Power MOSFET, Gate Driver | |
| Kit Name | EB 2ED2410 3D 1BCDP | |
| Standards/Approvals | RoHS | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Power Management Function MOSFET | ||
Product Type Gate Driver Module | ||
For Use With 2ED2410-EM 24 V Evaluation Motherboard | ||
Kit Classification Evaluation Board | ||
Featured Device Power MOSFET, Gate Driver | ||
Kit Name EB 2ED2410 3D 1BCDP | ||
Standards/Approvals RoHS | ||
EiceDRIVER™ APD 2ED2410-EM - 24 V evaluation MOSFET daughterboard, common drain, pre-charging
This daughterboard belongs to a family of evaluation boards that can be combined with the 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M). These daughterboards are used to address different MOSFET and shunt arrangements typically found in modern automotive power distributions for 12 and 24 V board nets.
This daughterboard EB 2ED2410 3D 1BCDP is addressing one load channel and consisting of two 60 V OptiMOSTM5 power MOSFET (1.1 mOhm) in a back2back common drain configuration. In addition, the load could be pre-charged with a dedicated pre-charge path.
Following other daughterboards are available:
•EB 2ED2410 3D 1BCS: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCD: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common drain, 0.5 mOhm shunt
•EB 2ED2410 3D 1BCSP: 60 V OptiMOSTM5 power MOSFET (1.1 mOhm), back2back - common source, 0.5 mOhm shunt, with pre-charging
Summary of Features
•Suitable for 12 and 24 V board nets
•Combination with 2ED2410-EM 24 V evaluation motherboard (EB 2ED2410 3M)
•0,5 mOhm shunt resistor
•60 V OptiMOSTM5 power MOSFET (1,1 Ohm) suitable for 12 and 24 V board nets
•MOSFET temperature monitoring with NTC resistors
•Dedicated pre-charge path for loads with high input capacitance
•Nominal current up to 20 A continuous or 30 A for 10 min
Liens connexes
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